| 摘要 |
PURPOSE: A method for preventing unwanted programming in an MRAM configuration is provided to prevent an unsuitable programming by compensating currents that counteract the stray magnetic fields. CONSTITUTION: In order to prevent such programming errors in the region of the adjacent MTJ memory cells(11,13), compensating magnetic fields can be used by passing, for example, an appropriate compensating current(IBL3) through the bit line(BL3). The compensating magnetic field produced by this compensating current(IBL3) allows the parallel magnetic field components in the MTJ memory cell(13) to be virtually eliminated. The same applies for the MTJ memory cell(11). A compensating magnetic field may possibly also be produced by a separate line(L) running next to the bit line(BL), which is subject to the stray magnetic field.
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