| 摘要 |
A copolymer useful as a photoresist resin for submicrolithography, comprising glutarimide derivatives and acrylic acid derivatives as shown in Formula I and a photoresist composition comprising the same. wherein, R1 is a straight or branched alkyl group containing 0-30 carbon atoms; R2 and R3 independently represent straight or branched alkoxy or cycloalkoxy groups containing 1-15 substituted or non-substituted carbon atoms; R4 and R5 independently represent hydrogen or an alkyl group; and p, q and r, which may be the same or different, each is a polymerization ratio; p ranges from 10 to 90, q ranges from 10 to 90 and r ranges from 0 to 50. |
