| 摘要 |
In one embodiment, the present invention relates to a method of forming a NAND type flash memory device, involving the steps of growing a first oxide layer over at least a portion of a substrate, the substrate including a core region and a periphery region, the core region including a flash memory cell area and a select gate area and the periphery region including a high voltage transistor area and low voltage transistor area; depositing a first doped amorphous silicon layer over at least a portion of the first oxide layer; depositing a dielectric layer over at least a portion of the first doped amorphous silicon layer; removing portions of the first oxide layer, the first doped amorphous silicon layer, and the dielectric layer in the select gate area of the core region and the high voltage transistor area and the low voltage transistor area the periphery region; growing a second oxide layer over at least a portion of the substrate in the select gate area of the core region and the high voltage transistor area and the low voltage transistor area the periphery region; removing portions of the second oxide layer in the select gate area of the core region and the low voltage transistor area the periphery region; growing a third oxide layer over at least a portion of the substrate in the select gate area of the core region and the low voltage transistor area of the periphery region; depositing a second doped amorphous silicon layer over at least a portion of the dielectric layer, the second oxide layer and the third oxide layer; and forming a flash memory cell in the flash memory cell area of the core region, a select gate transistor in the select gate area of the core region, a low voltage transistor in the low voltage transistor area of the periphery region, and a high voltage transistor in the high voltage transistor area of the periphery region. |
