Current conveyor and method for readout of MTJ memories

摘要

A current conveyor for readout of a magnetic tunneling junction memory cell is coupled to a data readout line connected to at least one MTJ memory cell. The current conveyor includes a FET with a source terminal coupled to a current source and a drain terminal coupled to the data readout line. The gate terminal of the FET is connected to an output terminal of an operational amplifier connected to receive negative feedback from the data readout line and to receive a bias voltage on a second input terminal. The current conveyor has very low input impedance so that minimum data readout line swing is achieved.