SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE

摘要

PROBLEM TO BE SOLVED: To realize high accuracy and low power consumption by slectrically isolating an element formation region for forming a clock generating circuit and an element formation region for constituting a digital circuit, which is formed on a semiconductor substrate. SOLUTION: Sence amplifier 2 are formed in respective memory cell arrays 1 of a memory chip where these amplifiers 2 are provided such that they are made to exist in the interior of respective triple wells forming the memory cell arrays 1. A DLL (clock generating circuit) analog part 3 is provided in the interior of a triple well in the central part of the memory chip, a triple well in the analog part 3 is provided so that it is made to be isolated from the triple wells including the arrays and the amplifiers 2 to make them adjacent to the part 3, and DLL digital parts 4 are made to exist on the outside of the triple wells. As a result, a low power consumption in a semiconductor integrated circuit device can be achieved with high accuracy.