发明名称 SEMICONDUCTOR LIGHT-EMITTING ELEMENT
摘要 PROBLEM TO BE SOLVED: To provide a resonant cavity type LED, which has an excellent moisture resistance and does not exhibit light-output saturation even though a current is injected to several tens of mA, with high mass productivity. SOLUTION: This is a semiconductor light-emitting element of a structure, wherein a resonator is formed of one group of multilayer reflective films 3 and 7 formed at a constant interval on a GaAs substrate 1 with the main surface slanted at an angle higher than 2 deg. from the face (100) to the orientation [011] and a luminous layer 5 is formed at the position of the loop of a standing wave in this resonator, and in the element, the film 3, which is formed on the side of the substrate 1, on one side of the films 3 and 7 is formed of a plurality of AlxGa1-xAs (0<=x<=1) layers and the other film 7 is formed of a plurality of AlyGazIn1-y-zP (0<=y<=1 and 0<=z<=1) layers. The moisture resistance of the element is enhanced and at the same time, the element can obtain a high reflectivity by increasing the number of the reflective films.
申请公布号 JP2001068732(A) 申请公布日期 2001.03.16
申请号 JP19990236619 申请日期 1999.08.24
申请人 SHARP CORP 发明人 KURAHASHI TAKANAO;HOSOBANE HIROYUKI;NAKATSU HIROSHI;MURAKAMI TETSURO
分类号 H01L33/06;H01L33/10;H01L33/14;H01L33/16;H01L33/30;H01L33/38;H01L33/40;H01L33/46;H01S5/183 主分类号 H01L33/06
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