| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a silicon thin film photoelectric module, which can be realized at a high yield and with reliability fully extending over a long period, and the manufacturing method of the moudle. SOLUTION: A silicon thin film photoelectric conversion module 1 is characterized by that the module 1 is provided with a substrate 2 of the longitudinal length of 20 cm or longer and a plurality of thin film photoelectric conversion cells 10 formed by splitting respectively first electrode layers, non-single crystal silicon thin film photoelectric conversion units of a film thickness of 0.7μm or thicker and second electrode layers, which are formed in order on the substrate 2, and the first electrode layers, the units and the second electrode layers are respectively split by groove parts 11 extended in the first direction and groove parts 12 having a depth of 50% or deeper of their film thickness are provided in the units in parallel to the second direction which forms an angle of 45 to 90 deg. with the first direction.</p> |
