| 摘要 |
PROBLEM TO BE SOLVED: To suppress deterioration of a thin film semiconductor element due to infiltration of a contaminating elements and ions, by a method wherein a film having a blocking action to the movable ions such as a silicon nitride, an aluminum oxide and a tantalum oxide is formed on the upper and lower parts of the element. SOLUTION: A first silicon nitride film is formed on an insulative substrate 101 as a first blocking layer 102 to prevent a contamination from the substrate 101. A coat 103 having a good adhesion to a silicon material is formed on the first silicon nitride film 102. A source region 107, a drain region 109, a channel region 108 held between the regions 107 and 109, a gate insulating film 104 and a TFT having a gate electrode 110 are formed on the coat 103. A second silicon nitride coat is formed on the film 104 as a second blocking film 105 in such a way as to cover the TFT. Moreover, the film 105 is formed after the formation of the TFT and before the formation of the electrode 110 on the source region 107 and/or the drain region 109.
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