| 摘要 |
PROBLEM TO BE SOLVED: To obtain a structure which is suitably mass-produced by using EB as a standard cell structure, used for a MOS-type semiconductor integrated circuit. SOLUTION: Gate electrodes 1 are arranged at prescribed intervals and has a basic shape such that their tip parts are bent sifted by a half interval. The standard cell structure is constituted by using the gate electrodes 1 in the basic shape and gate electrodes 2, 1A, 1B, 1C, 2A, 2B, and 2C obtained by inverting symmetrically about a line and rotating them. The gate electrodes of complementary P and N channel transistors are arranged, so that their gate tip parts are connected. Furthermore, the gate electrodes of the P-channel or N-channel transistors are so arranged as to connect to adjacent gate electrodes of the complementary N-channel or P-channel transistors, when inverted.
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