| 摘要 |
PROBLEM TO BE SOLVED: To enable low voltage operation and rapid operation while keeping reliability of a hetero-bipolar transistor high, by specifying average lattice strain of an Si, Ge and C-base second semiconductor layer whose band gap is smaller than that of an Si-base first semiconductor layer. SOLUTION: A second semiconductor layer 4 which comprises an SiGeC layer, has a band gap which is smaller than that of a first semiconductor layer 20 and has average lattice strain of 1.0% or less, is formed on a first conductivity first semiconductor layer 20 whose element is Si and which functions as a collector layer. A third semiconductor layer 5 which comprises Si and has a band gap which is larger than that of the second semiconductor layer 4 is further formed thereon, a conductor layer containing first conductivity impurities which comes into contact with a part of the semiconductor layer 5 is formed, a base layer 8a is formed by introducing second conductivity impurities to a part of the second semiconductor layer 4, first conductivity impurities in a conductive layer are diffused to the third semiconductor layer 5 by heat treatment, and an emitter diffusion layer 9a is formed.
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