| 摘要 |
PROBLEM TO BE SOLVED: To provide an etching method wherein a fine pattern is formed safely on a silicon compound surface. SOLUTION: A thin liquid layer containing hydrofluoric acid and oxidizer is inserted between a silicon compound surface 1 and a window member 2 through which ultraviolet ray 11 is transmitted. The ultraviolet ray 11 is projected toward the silicon compound surface 1 through the window member 2 side, so that at least a part of the silicon compound surface 1 is oxidized and a silicon oxide generated therefrom is removed from the silicon compound surface 1 using the hydrofluoric acid contained in the thin liquid layer.
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