| 摘要 |
PROBLEM TO BE SOLVED: To optimize and improve performance of the element structure of a ferroelectric nonvolatile memory by increasing the gate width of MOSFET without deteriorating the degree of integration of the MOSFET. SOLUTION: In a nonvolatile semiconductor memory in which one ferroelectric capacitor is connected to each gate electrode of an MOSFET, thin Si films 10 which are formed on an insulating substrate in a stripe form and in which n+-type regions 13, p-type regions 14, and n+-type regions 15 are laminated upon another, hole sections 17 which are formed through the Si films 10 to reach the lower n+-type regions 13, and gate electrodes 21 which are formed on the internal side faces of the hole sections 17 through gate insulating films 19 are provided. In addition, ferroelectric capacitors which are formed on the Si films 10 and the lower electrodes 25 of which are connected to the gate electrodes 21 are provided.
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