SEMICONDUCTOR STORAGE DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a storage device which can significantly reduce the capacitor area of each memory unit thereby contributing to the increase of the degree of integration of memories and realizing a G bit-class DRAM. SOLUTION: A needle-like body of silicon crystal 11 is formed for each memory unit of a DRAM. A capacitor 10 is formed on the side face of the crystal by using the body 11 as one electrode. Namely, an electrode 13 is provided outside an insulating film 12. Therefore, a capacitor having a large capacitance can be formed with a small occupying area. Preferably, the degree of integration of the DRAM is increased by also forming a switching transistor at part of the needle-like crystal 11. The transistor may be provided at the foot or the tip of the crystal 11.