| 摘要 |
PROBLEM TO BE SOLVED: To obtain a semiconductor device whose resistance to reflow is largely improved by enabling to prevent cracks, peeling or the like. SOLUTION: A dummy pattern 301 is formed on the surface of a base substrate 101 between the midpoints of long sides of the base substrate 101 and a semiconductor chip 113. The dummy pattern 301 exhibits a relatively low adhesion to a sealing resin 117. The stress generated at the time of reflow operation is released through the interface between the dummy pattern 301 and the sealing resin 117. |
