SEMICONDUCTOR DEVICE AND SEMICONDUCTOR INTEGRATED CIRCUIT

摘要

PROBLEM TO BE SOLVED: To prevent a collector current from changing even at fast operation with a changed collector voltage by making constant a band gap in a first single crystalline semiconductor region in an area near a junction part with a second single crystalline semiconductor region and reduced toward a junction part with a third single crystalline semiconductor region. SOLUTION: A band gap of a first conductivity first single crystalline semiconductor layer which becomes a base region of a bipolar transistor is smaller than the band gap of second conductivity second and third single crystalline semiconductor layers consisting of an emitter region and a collector region. The band gap of a first single crystalline semiconductor layer a base region is fixed in an area near a junction with a second single crystalline semiconductor layer of an emitter region, and reduces toward a junction with a third single crystalline semiconductor layer of a collector region. The thickness of a base layer is about 5 to 100 nm, the thickness of an emitter layer is about 10 to 200 nm and the thickness of a collector layer is about 0.1 nm to 1 μm.