| 摘要 |
PROBLEM TO BE SOLVED: To manufacture a p-conductivity type zinc oxide, by using a p- conductivity type conductive material including nitrogen as its impurity. SOLUTION: First, a substrate 3 to form thereon a conductive thin-film is stored in a chamber 2. After reducing the pressure of the chamber 2, an excitation gas 10 is fed from an excitation-gas generating apparatus 11 onto the surface of the substrate 3. For example, by exciting the gas beam of nitrogen oxide through using an ECR, the excitation gas 10 is outputted. The excitation gas 10 generated in this way contains nitrogen and oxygen ions, etc. Then, after so controlling for the pressure of the excitation gas 10 in the chamber 2 as to have a predetermined value, an ArF excimer laser beam 9 is projected on a ZnO target 4 disposed in the chamber 2 oppositely to the substrate 3. Therefore, the oxygen-deficiency of zinc oxide is sufficiently compensated and the enough amount of nitrogen can be doped in a thin film. As a result, a p- conductivity type conductive thin-film having zinc oxide as its parent material can be obtained. |
