| 摘要 |
PROBLEM TO BE SOLVED: To provide a compound semiconductor magnetoresistance element which is inexpensive, provided with electrodes arranged at a narrow interval, and manufactured without using a high photolighography technique. SOLUTION: A magnetic sensor 25 formed of a compound semiconductor thin film 23 which functions as a magnetoresistive effect film and electrodes 22 and 24 through which a power is applied to the magnetic sensor 25 are formed on a board 21 for the formation of a compound semiconductor magnetoresistance element 20, where the direction of a current which flows through the magnetic sensor 25 is identical to the thickness direction of the compound semiconductor thin film 23, and therefore a space between the electrodes 22 and 24 can be set very narrow without using a high photolithography technique. Furthermore, provided that the thickness of the magnetic sensor 25 and the length of the sides of the electrodes 22 and 24 vertical to the direction of a magnetic field are represented by (t) and Lb respectively, a ratio t:Lb can be set very large, so that a compound semiconductor magnetoresistance element 20 possessed of a large magnetoresistance change can be realized.
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