| 摘要 |
PROBLEM TO BE SOLVED: To obtain a MOS thyristor in which loss can be reduced in a low current region. SOLUTION: In an N type silicon layer 7 isolated by dielectrics 3, 6, a P type base region 8, an N+ type emitter region 9, a cathode electrode 10, a P+ type anode region 11 and an anode electrode 12 are formed and a gate electrode 14 is positioned above the exposed surface part of the base region 8 sandwiched by the emitter region 9 and the N type silicon layer 7 through a gate insulation film 13. An N+ type drain region 15 is formed in a region contiguous to the anode region 11 on the surface of N type silicon layer 7 and the anode electrode 12 also touches the drain region 15. A MOS transistor and a thyristor operate in parallel in one element.
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