| 摘要 |
PROBLEM TO BE SOLVED: To provide an etching method capable of comparatively safely forming a fine pattern with high precision on a silicon carbide substrate. SOLUTION: The etching method comprises forming a thin liq. layer contg. hydrofluoric acid between a silicon carbide substrate and a sapphire glass window member, and irradiating the silicon carbide substrate with an Xe2* excimer lamp beam and an ArF laser beam from the sapphire glass window member, thereby removing at least a part of the surface of the silicon carbide substrate.
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