| 摘要 |
PROBLEM TO BE SOLVED: To enable photoelectric conversion devices to be increased and made uniform in conversion efficiency by a method wherein an N-type semiconductor of cadmium sulfide of specific composition is used. SOLUTION: Sulfur contained in cadmium sulfide is required to be regulated in amount so as to make a mixed crystal layer whose composition formula is represented by CdTeSx or the like optimal in thickness. An N-type semiconductor 2 of cadmium sulfide CdSx, where x is so set as to satisfy a formula, 0.90<=x<1.00, is used. When a P-type semiconductor layer 3 is formed, a mixed crystal layer is varied in thickness depending on a forming temperature and a forming time, and for instance, a cadmium telluride layer 3 is formed at a temperature of 530 to 630 deg.C for 1 to 10 minutes. By this setup, a photoelectric conversion device of high conversion efficiency can be obtained. |
