| 摘要 |
PROBLEM TO BE SOLVED: To provide an output with a large variability of voltage without bias component with a simple circuit configuration, by forming a first magnetic sensitive section having a large magnetoresistance effect and a second magnetic sensitive section having a small magnetoresistance effect on a semiconductor substrate made of the same material. SOLUTION: Shunt electrodes 3 are arranged at a prescribed interval with L/W of a magnetic sensitivity unit 2a set to a small value, whereby a first magnetic sensitive section 5 having a large magnetoresistance effect is formed. A second magnetic sensitive section is formed by forming an InSb magnetic sensitive layer 2 having a prescribed width on a semiconductor substrate 1 by vacuum evaporation and photolithographic processes, and by connecting input/output electrodes 4 made of Au to both ends of the layer 2 in ohmic junction. Since the unit 2b is formed by interposing the InSb layer 2 with high electron mobility between the electrodes 4a and 4b, its magnetoresistance effect can be made small.
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