GATE SPACER STRUCTURE AND FORMING METHOD THEREOF

摘要

PURPOSE: A gate spacer structure and a method for forming the same are provided to prevent bridge between a gate pattern and a bit line by entirely covering a gate electrode using silicon nitride as a spacer. CONSTITUTION: A gate pattern(200) sequentially stacked on a gate oxide pattern(110), a gate electrode(120) and a capping insulator pattern(130) is formed on a semiconductor substrate(100). An oxide spacer(141) is formed at both sidewalls of the gate electrode(120) and the gate oxide pattern(110). Also, a gate spacer(161) is formed at both sidewalls of the oxide spacer(141) and the capping insulator pattern(130). Thereby, the capping insulator pattern(130) is directly connected to the gate spacer(161). Therefore, the gate electrode(120) and the gate oxide pattern(110) are entirely covered by the capping insulator pattern(130) and the gate spacer(161). The capping insulator pattern(130) and the gate spacer(161) are made of silicon nitride.