| 摘要 |
PROBLEM TO BE SOLVED: To obtain a semiconductor integrated circuit for accurately preventing a through current in a sense amplifier. SOLUTION: In the semiconductor integrated circuit that is provided with a sense amplifier 9 for detecting the potential of memory cells 1a, 1b,... via a lead common line 2 and composes a static memory circuit, the sense amplifier 9 is provided with an inverter 5 for leading an output signal corresponding to the input signal of the sense amplifier 9 corresponding to the potential of the memory cells 1a, 1b,..., an initialization means that is made of an N-channel MOS transistor 8 for initializing the inverter 5, and a conduction control means that is made of a P-channel MOS transistor 7 for cutting an input signal from the inverter 5 when the input signal of the sense amplifier 9 changes from the initialization state due to the potential of the memory cells 1a, 1b,... and the output signal of the inverter 5 changes.
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