| 摘要 |
PROBLEM TO BE SOLVED: To improve heat radiation and thereby reduce ion resistance and thickness of a semiconductor chip by providing the semiconductor chip with an insulating sheet that covers a region of its primary surface, the region excluding projecting electrodes for electrical connection between first portions of first and second leads and the corresponding first and second electrodes. SOLUTION: A lead 2 is formed integrally of a first portion 2A located on a source electrode of a semiconductor chip 10. A second portion 2B is located on the outside of one of mutually opposed long edges of the chip 10, and the portion 2B projects from one of the opposed long sides of the chip 10. The portion 2A is electrically connected to the source electrode of the chip 10 interposed a plurality of projecting electrodes. The lead 2 is adhesively fixed to an element forming surface of the chip 10 interposed in an insulating sheet 9. Similarly, a lead 3 is formed integrally of a first portion 3A and a second portion 3B. The portion 3A is located on a gate electrode of the chip 10, and the portion 3B projects from the one of the opposed long sides of the chip 10. The portion 3A is connected to the gate electrode of the chip 10 via a plurality of projecting electrodes. The lead 3 is adhesively fixed to the element forming surface via the sheet 9. |
