| 摘要 |
PROBLEM TO BE SOLVED: To obtain a semiconductor memory of a fault column relief type by reducing number of selecting signal lines for data line shift controlling. SOLUTION: In a DRAM for a fault column relief by data line shifting, a data line shifting circuit 8 shifts data lines RD disposed at one side at the data line RD for data of the fault column to be transferred as a starting point one by one when the fault column is accessed to connect to data input/output line I/O including a spare data line SRD. A selecting circuit 10 stores corresponding relation between the address of the fault column and a shift designating number assigned to each data input/output line I/O to increase at each starting point of the data line shift by the circuit 8 corresponding to the address, and outputs a select signal corresponding to the shift designating number when the address of the fault column is input. A shift control circuit 9 compares the select signal output from the circuit 10 with the shift designating number and outputs a shift control signal to the circuit 8.
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