COMPOSITE SEMICONDUCTOR DEVICE INCLUDING PIN DIODE, FABRICATION THEREOF AND HIGH-FREQUENCY DEVICE COMPRISING THEM

摘要

PROBLEM TO BE SOLVED: To obtain a composite semiconductor device including PIN diodes, in which active elements of different types from PIN diode are integrated on a semiconductor substrate. SOLUTION: An n-type semiconductor region 12 and a p-type semiconductor region 13 are provided on a semi-insulating GaAs substrate 11 and an n-type ohmic electrode 14 is provided on the n-type semiconductor region 12, while a p-type ohmic electrode 15 is provided on the p-type semiconductor region 13. The n-type semiconductor region 12 and the p-type semiconductor region 13 are spaced apart by 1μm and a p-layer/i-layer/n-layer structure of a PIN diode 16 is formed. Furthermore, an FET 10 is provided on the semiinsulating GaAs substrate 11.