| 摘要 |
PROBLEM TO BE SOLVED: To obtain a semiconductor device which can prevent a thin ferroelectric capacitor film used for a memory cell from being damaged by hydrogen gas generated during the manufacturing process of the device and a method for manufacturing the device. SOLUTION: A semiconductor device is constituted in such a way that a capacitor structure 250 containing a dielectric layer is formed on an active substrate 210 containing an element isolating region, a diffusion region, and a gate structure and the structure 250 is flattened by covering the structure 250 with a first insulating layer 226. Then openings are formed in a pattern, filled up with bit lines 234 and metallic interconnections 236, and coated with a first barrier layer 238. In addition, an intermetallic dielectric layer 240 is formed on the barrier layer 238 and an aluminum layer 242, a second barrier layer 244, and a passivation layer 246 are successively formed on the dielectric layer 240. Hydrogen existing in the forming environment of the dielectric layer 240 and hydrogen generated in the step of forming the passivation layer 246 are isolated from the capacitor structure 250 by the first and second barrier layers 238 and 244.
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