| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a group III nitride laser diode exhibiting excellent characteristics and high production yield by using only nitrogen gas as the carrier gas during organo-metallic chemical vapor deposition. SOLUTION: Since Si doping increases the mobility of carries in an active layer, the resistivity decreases, with the expectation that LD characteristics will be improved. By setting the growth temperature for an MQM active layer to 800 deg.C and using only nitrogen as the carrier gas, 100 Si-doped LDs were prepared and evaluated. As to the doping of Si, the mol-based flowrate of SiH4 as the doping gas with respect to the total mol-based flowrate of In and Ga gaseous raw materials within the vapor phase is set to 1×107, with the other doping conditions being the same. Therefore, the substrate temperature during the vapor phase deposition can be set to as high as 800 deg.C, which in turn decreases defects in the group III nitride layer composed of AlxGayIn1-x-y and improves the characteristics as well as production yield of the LDs. |
