| 摘要 |
PROBLEM TO BE SOLVED: To suppress a reduction in the luminous efficiency of a P-N-P-N light-emitting thyristor having a double heterojunction. SOLUTION: A substrate 10 of this light-emitting thyristor consists of a GaAs layer, the impurities in the substrate 10 are Zn impurities, a first layer 12 on the substrate 10 consists of a GaAs layer of a thickness of 500 nm, the impurities in the layer 12 are Zn impurities, a second layer 14 on the layer 12 consists of an Al0.3Ga0.7As layer of a thickness of 500 nm, the impurities in the layer 14 are Zn impurities, a third layer on the layer 14 consists of an Al0.13Ga0.87As layer of a thickness of 200 nm and the impurities in the layer 16 are Si impurities. The concentration of the Zn impurities in the layer 14 is set at a concentration of 2×1017/cm3 and is made lower than that of 1×1018/cm3 of the Si impurities in the layer 16. |
