| 摘要 |
PURPOSE: A method for forming a contact hole is provided to reduce the number of process step by forming a conductive layer pattern and a contact hole. CONSTITUTION: The first insulating layer(12), a conductive layer, and the first photo-resist pattern are formed on a semiconductor substrate(11). A conductive layer pattern is formed by etching the conductive layer. The first photo-resist layer pattern is removed. The second insulating layer is formed thereon. The second photo-resist layer pattern(16) is formed on a whole surface of the above structure. A contact hole(17) is formed by etching the second insulating layer, the conductive pattern, and the first insulating layer(12). The photo-resist layer pattern(16) is removed. The third insulating layer is deposited on the whole surface. The third insulating layer spacer(19) is formed on a sidewall of the contact hole(17) by etching the third insulating layer.
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