| 发明名称 |
DIFFUSION BARRIER OF STEPWISE COMPOSITION FOR CHIP WIRING APPLICATION |
| 摘要 |
<p>PURPOSE: A barrier film for a semiconductor element structure is provided to prevent metal from migrating from a wiring structure to a surroundings material, for example, dielectric material surrounding the wiring structure. CONSTITUTION: A barrier film comprises a compound, including nitrogen as well as at least titanium or tantalum, nitrogen of a variable concentration in the barrier film, and oxygen of a variable concentration in the barrier film.</p> |
| 申请公布号 |
KR20010021194(A) |
申请公布日期 |
2001.03.15 |
| 申请号 |
KR20000044977 |
申请日期 |
2000.08.03 |
| 申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
UZOH CYPRIAN E;DANIEL C EDELSTEIN;SIMON ANDREW H |
| 分类号 |
H01L21/22;C23C14/00;C23C14/06;C23C14/34;H01L21/28;H01L21/285;H01L21/3205;H01L21/768;H01L23/52;H01L23/532;(IPC1-7):H01L21/22 |
主分类号 |
H01L21/22 |
| 代理机构 |
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