| 摘要 |
PROBLEM TO BE SOLVED: To form an excellent semiconductor thin film by increasing the yield of a semiconductor wafer using an atom layer epitaxy process. SOLUTION: A thin film is vapor deposited on a wafer 13 provided in a closed reactive chamber 700. Here, a susceptor 100 which, provided in the reactive chamber 700, houses a plurality of wafers 13 so that a reactive surface is exposed, a gas supply part 701 which supplies a reactive gas toward the reactive surface of the wafer 13, a susceptor drive part 300 which rotates the susceptor 100 at a specified rotational angle and moves it to a reactive position as well as a non-reactive position, a vacuum pumping part 600 which holds the reactive gas in the reactive chamber 700 to a constant pressure, and a heating part 400 which so heats that at least either the reactive surface or the reactive chamber 700 is heated under specified temperature conditions, are provided.
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