| 摘要 |
PROBLEM TO BE SOLVED: To suppress a local Cu contamination on a substrate surface at a low cost by a simple method, to reduce defects of devices which is caused by a local high concentration contamination of Cu on a substrate surface, and to suppress a local Cu contamination even when a low purity chemical agent comprising much Cu is used. SOLUTION: Related to the wet processing method, before the surface of a substrate 12 is processed in a first water solution 11 containing Cu ion, a second water solution 13 which contains at least one kind among Fe ion, Al ion, and Zn ion by at least 1 ppb is allowed to contact a substrate, or, the first water solution contains at least one kind among Fe ion, Al ion, and Zn ion by such amount as the ion concentration is at least 0.1 times of Cu ion concentration. Related to the wet processing liquid, a wet process includes washing, mechanical/chemical polishing, and under-water storage process for a substrate, with at least one kind among Fe ion, Al ion, and Zn ion in addition to Cu ion contained by such amount as the ion concentration is at least 0.1 times of Cu ion concentration.
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