发明名称 DATE OUTPUT BUFFER OF SEMICONDUCTOR MEMORY DEVICE
摘要 PURPOSE: A data output buffer of a semiconductor memory device is provided to stabilize a level of a pull up transistor driving signal. CONSTITUTION: In a data output buffer of a semiconductor memory device, a pull up transistor driving device(10) receives a data output signal and the first and second control signal to generate a pull up transistor driving signal. A pull down transistor driving device(20) receives the data output signal and the first control signal to the pull up transistor driving signal. In the pull up transistor driving device, the first and second nodes are provided. The first and second transistors have the respective current paths and are controlled by the data output signal. The current paths of the first and second transistors are serial-formed sequentially between the first node and a ground. The first capacitor is provided, wherein one terminal thereof is connected to the data output signal and the other terminal thereof is connected to the first node. The second capacitor is provided, wherein one terminal thereof is connected to the data output signal and the other terminal thereof is connected to the second node. The third transistor is provided, wherein the gate thereof is connected to a current path formed between a supply voltage and the first node and the other terminal of the capacitor. A precharge device(30) precharges the second node with a supply voltage level.
申请公布号 KR20010019177(A) 申请公布日期 2001.03.15
申请号 KR19990035459 申请日期 1999.08.25
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 JUNG, U PYO
分类号 H03K19/00;(IPC1-7):H03K19/00 主分类号 H03K19/00
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