发明名称 CIRCUIT FOR REDUCING EMI OF SEMICONDUCTOR DEVICE
摘要 PURPOSE: A circuit for reducing EMI of semiconductor device is provided to reduce EMI by having a plurality of transfer circuits to output a plurality of output signals having complementary phases each other. CONSTITUTION: A circuit for reducing EMI of semiconductor device has inverter(10) and a plurality of transfer circuits(20,30). The inverter(10) inverts and outputs an input signal(IN) applied through an input terminal. The each transfer circuit(20,30) has a plurality of transfer gate(TG's). The each transfer circuit(20,30) transfers the input signal and the output signal(INB) from the inverter(10). The circuit for reducing EMI of semiconductor device outputs a plurality of output signals(OUT1,OUT2) having complementary phases each other by having the plurality of transfer circuits thereby preventing EMI of semiconductor chip.
申请公布号 KR20010018880(A) 申请公布日期 2001.03.15
申请号 KR19990035012 申请日期 1999.08.23
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 YOON, YEONG HWAN
分类号 G11C11/40;(IPC1-7):G11C11/40 主分类号 G11C11/40
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