| 摘要 |
PURPOSE: A micro-electronic device having high dielectric coefficient and containing an adhesive layer and an insulation material useable as a gate electrode liner for the device and the manufacturing method thereof are provided. CONSTITUTION: The manufacturing method of this device includes a first step of forming a first electrode, a second step of depositing an adhesive layer made of a single material or a combination of materials selected from among Ta, TaNx, W, WNx, Ta/TaNx, and W/WNx, on the first electrode by using physical vapor growth of high-density plasma, a third step of depositing a dielectric layer on the adhesive layer, and a fourth step of forming a second electrode on the dielectric layer. This micro-electronic device has a first electrode, a second electrode(34), a dielectric layer(36) provided between the first and second electrodes, and a adhesive layer(40) provided between the first electrode and dielectric layer. The adhesive layer is made of a single material or a combination of materials selected from among Ta, TaNx, W, WNx, Ta/TaNx, and W/WNx.
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