METHOD FOR MANUFACTURING SELF-ALIGNED CONTACT OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing a self-aligned contact of a semiconductor device is provided to prevent a buried contact(BC) from being incompletely opened and to prevent a shoulder of a direct contact(DC) from being weakened, by making an interval between gate lines in a region for the BC smaller than that of a region for the DC. CONSTITUTION: A gate electrode layer is formed on a semiconductor substrate. The gate electrode layer is etched to form a plurality of gate lines(104) separated from each other by a predetermined interval, and an interval between gates in a region where a storage node contact is to be formed is narrower than that of the region where a bit line contact is to be formed. A nitride layer spacer is formed on a sidewall of the gate line. An oxide layer is formed to completely fill the interval between the gate lines. The oxide layer is etched to form the bit line contact and the storage node contact which expose the semiconductor substrate between the gate lines. An upper area of the bit line contact is broader than that of the storage node contact.