| 摘要 |
PURPOSE: A composed iridium barrier structure formed of heat- resistant metal oxide accompanied with barrier, and method of forming the same are provided to obtain an ir-m-O composed film which is effective for forming the electrode of a ferroelectric capacitor. CONSTITUTION: The conductive barrier stable at high temperatures serves as a conductive barrier stable at high temperatures in a integrated circuit and is equipped with the first barrier film(14), which contains material selected from among a group composed of Ti(O2), Ta(2O5), Nb(2O5), Zr(O2), Al(2O3), and Hf(O2) and the first composed film (16), which contains iridium and oxygen and is formed on the barrier film(14), by which the first composed film(16) is kept conductive, even after it is thermally treated at a high temperature in a hydrogen atmosphere. |
