METHOD FOR FABRICATING NON-VOLATILE SEMICONDUCTOR MEMORY DEVICE

摘要

PURPOSE: A method for fabricating a non-volatile semiconductor memory device having a split floating gate is provided to obtain a good profile of a spacer for preventing a reverse tunneling. CONSTITUTION: After a gate oxide layer(11) is grown on a silicon substrate(10), the split floating gate(13) is formed on the gate oxide layer(11) and then an oxide layer(17) is formed thereon. Next, the floating gate(13) and the oxide layer(17) are covered with a tunneling oxide layer(19). After that, a nitride layer(20) is formed over the gate oxide layer(11) and the tunneling oxide layer(19), and an oxide spacer(31) is then formed near lower edges of the floating gate(13). Thereafter, the exposed nitride layer(20) is removed together with the oxide spacer(31) except a masked portion under the oxide spacer(31). Accordingly, the nitride spacer for preventing a reverse tunneling is obtained with a good profile near the lower edges of the floating gate(13).