| 摘要 |
PROBLEM TO BE SOLVED: To make a semiconductor device thin, improve the radiation property of the semiconductor device, drop the on-resistance and operate the device at a high speed by installing an insulating sheet, covering the first main face of a semiconductor chip in an area except for a region where a plurality of projecting electrodes are arranged. SOLUTION: An insulating sheet 9 is laid between the element-forming face of a semiconductor chip 10 and the first parts 2A and 3A of a lead 2 and a lead 3. Projecting electrodes are installed between the electrode of the semiconductor chip 10 and the first parts 2A and 3A of the lead 2 and the lead 3, and they are thermally compression-bonded. Thus, a resin path by resin forming becomes unnecessary, and the overall thickness of a package becomes small, by the amount corresponding to the thickness of the resin path. Since the upper faces of the first patterns 2A and 3A and the second parts 2B and 3B as a whole of the leads 2 and 3 are exposed from the insulating sheet 9, radiation property for discharging heat generated from the semiconductor chip 10 outside becomes high. Thus, the semiconductor device can be made thin, radiation property can be improved, and on-resistance can be dropped. |
