| 摘要 |
<p>PROBLEM TO BE SOLVED: To unnecessitate accurate control of the thickness of each layer and the optical characteristics of a thin film resistor, by a method wherein an integrated circuit is formed in a semiconductor device base body, a reflective layer is provided in such a way as to cover the base body, and a resistance layer is provided in such a way as to cover the reflective layer. SOLUTION: A semiconductor device base body 70 is provided with a plurality of semiconductor devices or one integrated circuit, a handle base body 90 is provided in the base body 70, and this thin body 90 is bonded to an oxide layer 80 on the side of the rear of the base body 70. The devices or the integrated circuit in the base body 70 are or is covered with an insulating material, such as a deposited oxide layer or thermooxidized oxide layers 50 and 60, a reflective layer 100 to reflect a trimming laser beam is provided on the layer 50 and a resistance layer 40 which can be trimmed is provided on the layer 60 in such a way as to cover the layer 100. As a result, it can be dispensed with to eliminate the internal reaction of the lower side layer of a semiconductor wafer to a laser trimming and to accurately control the thickness of each layer and the optical characteristics of a thin film resistor.</p> |
