METHOD FOR MANUFACTURING CONTACT HOLE FOR COPPER INTERCONNECTION

摘要

PURPOSE: A method for manufacturing a contact hole for a copper interconnection is provided to simplify a manufacturing process without using a conventional intermediate silicon oxide layer and an interlayer dielectric, and to remarkably decrease a dielectric constant by eliminating a silicon oxide layer between interlayer dielectrics. CONSTITUTION: An interlayer dielectric(20) and a silicon oxide layer(25) are sequentially stacked on a semiconductor substrate. After the first photoresist layer having a contact portion is stacked, an isotropic contact hole is formed wherein a part of the silicon oxide layer and the interlayer dielectric is etched to have a round shape by an isotropic wet-etching method. The first photoresist layer is eliminated by a chemical solution. After the second photoresist layer of which a contact portion is small as compared with the isotropic contact hole is stacked, a contact hole connected to a lower metal line is formed by an etching process. The second photoresist layer is removed to form a dual damascene contact hole(50) of a round shape.