HIGH RESISTIBILITY SILICON CARBIDE LAYER FOR 4 TRANSISTOR SRAM

摘要

PURPOSE: A high resistibility silicon carbide layer for 4 transistor SRAM is provided to improve thermal characteristics and decrease a surface area of a device. CONSTITUTION: A dielectric layer is formed on the active region(210) of a semiconductor wafer(205), and a resistive layer is formed on the dielectric layer, where the resistive layer is formed of a compound of a III or IV element as a first element with a IV or V element as a second element. An electrical interconnection structure is connected to the resistive layer to enable it to be electrically connected to the active region(210). Accordingly, the thermal characteristics is improved and the mounting area can be saved.