MANUFACTURE OF SEMICONDUCTOR STRUCTURE WITH REDUCED LEAK CURRENT DENSITY

摘要

PROBLEM TO BE SOLVED: To provide a method of forming a high permitting oxide on a semiconductor structure having a low leak current density. SOLUTION: The semiconductor structure forming method comprises a step of providing an Si substrate 10 having a surface, a step of forming an interface involving an adjacent seed layer 18 on the surface of the Si substrate 10, a step of forming a buffer layer 20 utilizing molecules of O, and a step of forming one or more high permittivity oxide layers 22 on the buffer layer 20 utilizing active O.