METHOD FOR FORMING METAL LINE OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for forming a metal line of a semiconductor device is provided to improve a burying effect of a contact hole of a semiconductor device by increasing fluidity of a metallic conductive layer. CONSTITUTION: A junction layer(30) is formed by laminating a metal on an upper portion of an insulating layer(20) of a silicon substrate(10) and an inner wall of a contact hole of the silicon substrate(10). A diffusion barrier(40) is formed on the junction layer in order to prevent a mutual reaction between the metal of the junction layer and the silicon substrate. A metal layer is formed on the diffusion barrier(40) by laminating magnesium on an upper portion of the diffusion barrier(40). A metallic conductive layer(60) is formed on the metal layer by laminating a conductive metal on the metal layer. An anti-reflective layer(70) is formed on the metallic conductive layer(60).