发明名称 COOLING GAS USED WITH SELF-SPUTTERING METHOD
摘要 PURPOSE: A cooling gas used with a self-sputtering method is provided to improve an efficiency of a plasma sputtering process by maintaining a low-pressure plasma due to helium. CONSTITUTION: A plasma sputtering reactor(10), particularly one designed for sustained self-sputtering of copper or for low-pressure sputtering, in which the pedestal(16) supporting the wafer(18) to be sputter deposited includes backside cooling or heating of the wafer through a thermal transfer gas(60), the thermal transfer gas being helium. Argon(24) is supplied to strike the plasma(38) and may be additionally supplied during operation for low-pressure sputtering.
申请公布号 KR20010021278(A) 申请公布日期 2001.03.15
申请号 KR20000046618 申请日期 2000.08.11
申请人 APPLIED MATERIALS INC. 发明人 FU, JIANMING
分类号 C23C14/50;C23C14/34;C23C14/35;C23C14/54;H01L21/00;H01L21/203;H01L21/28;H01L21/285;(IPC1-7):C23C14/34 主分类号 C23C14/50
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