| 摘要 |
PURPOSE: An integrated circuit is provided together with its manufacturing method where electro-migration property of the conductive structure is improved. CONSTITUTION: The integrated circuit substrate(10) comprises a first dielectrics formed in a first dielectrics layer(40) and a first flattened layer(45) formed of a material different from a first material layer (30) and the first dielectrics layer(40) formed over it. By the same process, another layers including the second dielectrics layer(90), material layer(80) and flattened layer(95) are formed. Here, the material of the first material layer(30) has a larger Young's modulus than that of the first dielectrics layer(40).
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