| 摘要 |
The invention relates to a method and a circuit (20) for evaluating the information content of a memory cell (10), preferably an MRAM memory cell, or a memory cell field. The aim of the invention is to carry out a precise, reliable evaluation of the memory cell (10). A first value representing the current passing through the memory cell (10) or a voltage value that is correlated with said current value is measured, guided through a first circuit branch (23), which has a switch (24) and a capacitor (25), and temporarily stored. The memory cell (10) is then subjected to a programming operation. A second current value or voltage value is subsequently measured in the same memory cell (10), guided through a second circuit branch (26), which has a switch (27) and a capacitor (28), and temporarily stored there. The two measured values are compared with each other in an evaluator (21). |
