| 摘要 |
PURPOSE: A method for forming a top-gate polysilicon thin film transistor is provided so that a burning phenomenon of photoresist can be prevented and damage of a polysilicon structure can be reduced by implanting highly-doped ions at a low energy. CONSTITUTION: A polysilicon pattern(23) is formed on a substrate(10). A gate insulating film is formed on the polysilicon pattern(23). A gate film is stacked on the gate insulating film. A photoresist pattern(21) is formed according to a photolithography process. A gate pattern(27) is formed according to an etching process using the photoresist pattern(23) as an etching mask. A gate insulating film pattern(25) is formed according to a succeeding etching process. Thereafter, highly-doped low energy ions are implanted by using the photoresist pattern(21) as an ion implantation mask. Accordingly, a burning phenomenon of the photoresist can be prevented in ion implantation, and damage of the polysilicon structure can be reduced according to the highly-doped low energy ion implantation. As a result, an annealing energy is decreased to solve many annealing problems. Moreover, impurity ions are implanted into the polysilicon without passing through the gate insulating film.
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