| 摘要 |
PURPOSE: Disclosed is a semiconductor device which is constituted with the minimum cell array area while the device maintains the cell array characteristic which is obtained when the conventional dummy cell is used. CONSTITUTION: When the conductivity type of the diffusion layer of a dummy cell region(22) is made opposite to that of the diffusion layers of adjacent memory cells, the diffusion layer formed in the dummy cell region(22) can also the used as a well potential supplying diffusion layer and the increase of the chip area caused by the increase of the split number of a memory cell array section can be suppressed.
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